Visualizing Thermally Activated Memristive Switching in Percolating Networks of Solution-Processed 2D Semiconductors

Sangwan Vinod K.; Rangnekar Sonal V.; Kang JoohoonShen JiananLee Hong-SubLam DavidShen JunhuaLiu Xiaolongde Moraes Ana C. M.Kuo LidiaGu JieWang HaihuaHersam Mark C.

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Visualizing Thermally Activated Memristive Switching in Percolating Networks of Solution-Processed 2D Semiconductors

机译：Visualizing Thermally Activated Memristive Switching in Percolating Networks of Solution-Processed 2D Semiconductors

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Memristive systems present a low-power alternative to silicon-based electronics for neuromorphic and in-memory computation. 2D materials have been increasingly explored for memristive applications due to their novel biomimetic functions, ultrathin geometry for ultimate scaling limits, and potential for fabricating large-area, flexible, and printed neuromorphic devices. While the switching mechanism in memristors based on single 2D nanosheets is similar to conventional oxide memristors, the switching mechanism in nanosheet composite films is complicated by the interplay of multiple physical processes and the inaccessibility of the active area in a two-terminal vertical geometry. Here, the authors report thermally activated memristors fabricated from percolating networks of diverse solution-processed 2D semiconductors including MoS2, ReS2, WS2, and InSe. The mechanisms underlying threshold switching and negative differential resistance are elucidated by designing large-area lateral memristors that allow the direct observation of filament and dendrite formation using in situ spatially resolved optical, chemical, and thermal analyses. The high switching ratios (up to 10(3)) that are achieved at low fields (approximate to 4 kV cm(-1)) are explained by thermally assisted electrical discharge that preferentially occurs at the sharp edges of 2D nanosheets. Overall, this work establishes percolating networks of solution-processed 2D semiconductors as a platform for neuromorphic architectures.

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《Advanced functional materials》 |2021年第52期|2107385.1-2107385.14|共14页
作者
Sangwan Vinod K.; Rangnekar Sonal V.; Kang JoohoonShen JiananLee Hong-SubLam DavidShen JunhuaLiu Xiaolongde Moraes Ana C. M.Kuo LidiaGu JieWang HaihuaHersam Mark C.;
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Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA;

Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA|Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea;

Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA|Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USANorthwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA|Kangwon Natl Univ, Dept Mat Sci & Engn, Chucheon 24341, South KoreaNorthwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA|Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USANorthwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA|Cornell Univ, Dept Phys, Ithaca, NY 14853 USANorthwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USANorthwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA|Shaanxi Univ Sci & Technol, Key Lab Auxiliary Chem & Technol Chem Ind, Xian 710021, Shaanxi, Peoples R ChinaNorthwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA|Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA|Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA;

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in situ imaging; liquid phase exfoliation; memristor; neuromorphic computing; van der Waals materials;

Visualizing Thermally Activated Memristive Switching in Percolating Networks of Solution-Processed 2D Semiconductors

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