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首页> 外文期刊>Nanotechnology >Excellent optoelectronic applications and electrical transport behavior of the n-WO3 nanostructures/p-diamond heterojunction: a new perspective
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Excellent optoelectronic applications and electrical transport behavior of the n-WO3 nanostructures/p-diamond heterojunction: a new perspective

机译：Excellent optoelectronic applications and electrical transport behavior of the n-WO3 nanostructures/p-diamond heterojunction: a new perspective

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摘要

Nanostructured n-type metal oxides/p-type boron-doped diamond heterojunctions have demonstrated a typical rectification feature and/or negative differential resistance (NDR) potentially applied in wide fields. Recently, the fabrication and electronic transport behavior of n-WO3 nanorods/p-diamond heterojunction at high temperatures were studied by Wang et al (2017 Appl. Phys. Lett. 110 052106), which opened the door for optoelectronic applications that can operate at high-temperatures, high-power, and in various harsh environments. In this perspective, an overview was presented on the future directions, challenges and opportunities for the optoelectronic applications based on the n-WO3 nanostructures/p-diamond heterojunction. We focus, in particular, on the prospects for its high temperature NDR, UV photodetector, field emission emitters, photocatalyst and optical information storage for a wide range of new optoelectronic applications.

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