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Atomic Layer Deposited RuO_2 Diffusion Barrier for Next Generation Ru-Interconnects

机译：Atomic Layer Deposited RuO_2 Diffusion Barrier for Next Generation Ru-Interconnects

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摘要

Atomic layer deposition (ALD) is a suitable technology for conformally depositing thin films on nanometer-scale 3D structures. RuO_2 is a promising diffusion barrier for Ru interconnects owing to its compatibility with Ru ALD and its remarkable diffusion barrier properties. Herein, a RuO_2 diffusion barrier using an ALD process is developed. The highly reactive Ru precursor [tri carbonyl(trimethylenemethane)ruthenium] and improved O_2 supply enable RuO_2 deposition. The optimal process conditions [pulsing time ratio (t_(O2)/t_(Ru)): 10, process pressure: 1 Torr, temperature: 180 ℃] are established for the RuO_2 growth. Growth parameters, such as the growth rate (0.56 A cycle~(-1)), nucleation delay (incubation period: 6 cycles), and conformality (step coverage: 100%), are also confirmed on the SiO_2 substrate. The structural and electrical properties of the Ru/RuO_2/Si multilayer are investigated to explore the diffusion barrier performance of the ALD-RuO_2 film. The formation of Ru silicide does not occur without the conductivity degradation of the Ru/RuO_2/ Si multilayer with an increase in the annealing temperature up to 850 ℃, thus demonstrating that interdiffusion of Ru and Si is completely suppressed by a thin (5 nm) ALD-RuO_2 film. Consequently, the practical growth behavior and diffusion barrier performance of RuO_2 can serve as a potential diffusion barrier for Ru interconnects.

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