Low Power MoS_2/Nb_2O_5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

Nam Jae Hyeon; Oh Seyoung; Jang Hye YeonKwon OjunPark HeejeongPark WoojinKwon Jung-DaeKim YonghunCho Byungjin

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Low Power MoS_2/Nb_2O_5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

机译：Low Power MoS_2/Nb_2O_5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

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Artificial synapses based on 2D MoS2 memtransistors have recently attracted considerable attention as a promising device architecture for complex neuromorphic systems. However, previous memtransistor devices occasionally cause uncontrollable analog switching and unreliable synaptic plasticity due to random variations in the field-induced defect migration. Herein, a highly reliable 2D MoS2/Nb2O5 heterostructure memtransistor device is demonstrated, in which the Nb2O5 interlayer thickness is a critical material parameter to induce and tune analog switching characteristics of the 2D MoS2. Ultraviolet photoelectron spectroscopy and photoluminescence analyses reveal that the Schottky barrier height at the 2D channel-electrode junction of the MoS2/Nb2O5 heterostructure films is increased, leading to more effective contact barrier modulation and allowing more reliable resistive switching. The 2D/oxide memtransistors attain dual-terminal (drain and gate) stimulated heterosynaptic plasticity and highly precise multi-states. In addition, the memtransistor devices show an extremely low power consumption of approximate to 6 pJ and reliable potentiation/depression endurance characteristics over 2000 pulses. A high pattern recognition accuracy of approximate to 94.2% is finally achieved from the synaptic plasticity modulated by the drain pulse configuration using an image pattern recognition simulation. Thus, the novel 2D/oxide memtransistor makes a potential neuromorphic circuitry more flexible and energy-efficient, promoting the development of more advanced neuromorphic systems.

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《Advanced functional materials》 |2021年第40期|2104174.1-2104174.10|共10页
作者
Nam Jae Hyeon; Oh Seyoung; Jang Hye YeonKwon OjunPark HeejeongPark WoojinKwon Jung-DaeKim YonghunCho Byungjin;
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作者单位

Korea Inst Mat Sci KIMS, Surface Mat Div, Dept Energy & Elect Mat, 797 Changwondaero, Chang Won 51508, Gyeongnam, South Korea;

Chungbuk Natl Univ, Dept Adv Mat Engn, Chungdae Ro 1, Cheongju 28644, Chungbuk, South Korea|Chungbuk Natl Univ, Dept Urban Energy & Environm Engn, Chungdae Ro 1, Cheongju 28644, Chungbuk, South Korea;

Chungbuk Natl Univ, Dept Adv Mat Engn, Chungdae Ro 1, Cheongju 28644, Chungbuk, South Korea;

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heterosynaptic plasticity; memtransistors; MNIST pattern recognition; MoS; (2); Nb; O-2; (5) heterostructures; neuromorphic systems;

Low Power MoS_2/Nb_2O_5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

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