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Novel Application of Phosphorescent Material for Non-Volatile Flash Photomemory and Artificial Photonic Synapse

机译：Novel Application of Phosphorescent Material for Non-Volatile Flash Photomemory and Artificial Photonic Synapse

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摘要

Phosphorescent materials have received considerable attention in organicsolar cells (OSCs) due to their long emission lifetime and inhibited geminaterecombination. Motivated by its particular photophysical property, herein, thespatially addressable bis(2-benzo[b]thiophen-2-ylpyridine)(acetylacetonate)iridium(Ⅲ) (Ir(bt)2(acac))/polystyrene-b-poly(4-vinylpyridine) (PS-b-P4VP)as a photoactive floating-gate is first demonstrated to explore the applicationof phosphorescent material on the photo-responsive characteristics ofphotomemory and artificial photonic synapse. By manipulating the interfacialarea between Ir(bt)_2(acac)/PS-b-P4VP and active channel by a solventannealing process, an ON/OFF current ratio of 103 and a low programmingtime of 700 ms can be achieved. The current study addresses the excitonlifetime of photoactive material functions in photomemory and highlights theinterfacial area between photoactive materials and charge-carrier transportingmaterials in reducing photo-programming time.

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