Unselective regrowth of 1.5-(mu)m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

W. Feng; Y. Ding; J. Q. PanL. J. ZhaoH. L. ZhuW. Wang

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Unselective regrowth of 1.5-(mu)m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

机译：Unselective regrowth of 1.5-(mu)m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

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摘要

Unselective regrowth for fabricating 1.5-(mu)m InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow line-width of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers.

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来源
《Optical Engineering》 |2006年第9期|090501-1-090501-3-0|共3页
作者
W. Feng; Y. Ding; J. Q. PanL. J. ZhaoH. L. ZhuW. Wang;
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作者单位

Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, P.O. Box 912, Beijing 100083, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学仪器;
关键词
buried heterostructure; regrowth; multiple quantum well; distributed feed back; laser;

Unselective regrowth of 1.5-(mu)m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

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