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In-Situ Growth of High-Quality Customized Monolayer Graphene Structures for Optoelectronics

机译：In-Situ Growth of High-Quality Customized Monolayer Graphene Structures for Optoelectronics

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摘要

High-quality customized monolayer graphene structures are a prerequisitefor various applications such as electronics, optoelectronics, and energydevices. Top-down photolithography is the main method for graphenepatterning, but it is greatly affected by complex manufacturing processesand residual photoresist. Recently, bottom-up methods based on catalystor precursor patterning have been developed. Although these methodscan achieve high-resolution graphene patterns, it is difficult to control thenumber of graphene layers and has a high defect density. Here, the authorspropose a selective area reconstruction method for in-situ growth of highqualitymonolayer graphene structures on copper substrates. The methodutilizes selective oxidation and high-temperature reduction technologies,which can effectively regulate the surface characteristics of the coppersubstrate, thereby precisely controlling the nucleation and growth behaviorof the customized graphene structure. The feature size of the fabricated graphenestructure is less than 1 μm and it has high monolayer coverage andextremely low defect density. The performance of the photoluminescencedevice and photodetector based on the customized monolayer graphenestructure is characterized. The method provides a new approach for thedirect growth of high-quality, scalable, and high-precision functional graphenestructures, which is expected to have great potential in the optoelectronicapplications.

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