Bottom-Up Synthesized Nanoporous Craphene Transistors

Mutlu Zafer; Jacobse Peter H.; McCurdy Ryan D.Llinas Juan P.Lin YuxuanVeber Gregory C.Fischer Felix R.Crommie Michael F.Bokor Jeffrey

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Bottom-Up Synthesized Nanoporous Craphene Transistors

机译：Bottom-Up Synthesized Nanoporous Craphene Transistors

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Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally-engineered emergent electronic properties, promising for electronic devices such as field-effect transistors (FETs), when synthesized with atomic precision. Bottom-up, on-surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom-up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom-up synthesized chevron-type NPG (C-NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C-NPG FETs show excellent switching performance with on-off ratios exceeding 10(4), which are tightly linked to the structural quality of C-NPG. The devices operate as p-type transistors in the air, while n-type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C-NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C-NPG. The present study provides important insights into the design of high-performance graphene-based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra-sensitive sensors for chemical or biological detection.

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来源
《Advanced functional materials》 |2021年第47期|2103798.1-2103798.14|共14页
作者
Mutlu Zafer; Jacobse Peter H.; McCurdy Ryan D.Llinas Juan P.Lin YuxuanVeber Gregory C.Fischer Felix R.Crommie Michael F.Bokor Jeffrey;
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作者单位

Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA;

Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA;

Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA|Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA|Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;

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正文语种英语
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bottom-up on-surface synthesis; electronic structure; field-effect transistors; graphene nanoribbons; nanoelectronics; nanoporous graphene; Raman spectroscopy; transport calculations;

Bottom-Up Synthesized Nanoporous Craphene Transistors

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