机译:Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si (x) N (y)
Univ Cote Azur;
Ctr Rech Ions Mat & Photon;
Univ MontpellierUniv Paris Saclay;
nanoporous; GaN; nanomask; SiN; AlN; sublimation; MOLECULAR-BEAM EPITAXY; POROUS SILICON; RECOMBINATION; DECOMPOSITION; DISSOLUTION; EXCITONS;