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Deterministic Polymorphic Engineering of MoTe_2 for Photonic and Optoelectronic Applications

机译:Deterministic Polymorphic Engineering of MoTe_2 for Photonic and Optoelectronic Applications

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摘要

Developing selective and coherent polymorphic crystals at the nanoscaleoffers a novel strategy for designing integrated architectures for photonic andoptoelectronic applications such as metasurfaces, optical gratings, photodetectors,and image sensors. Here, a direct optical writing approach isdemonstrated to deterministically create polymorphic 2D materials by locallyinducing metallic 1T′-MoTe_2 on the semiconducting 2H-MoTe_2 host layer. In thepolymorphic-engineered MoTe_2, 2H- and 1T′- crystalline phases exhibit strongoptical contrast from near-infrared to telecom-band ranges (1–1.5 μm), due tothe change in the band structure and increase in surface roughness. Sevenfoldenhancement of third harmonic generation intensity is realized with conversionefficiency (susceptibility) of ≈1.7 × 10~(?7) (1.1 × 10~(?19) m~2 V~(?2)) and ≈1.7 × 10~(?8)(0.3 × 10~(?19) m~2 V~(?2)) for 1T′ and 2H-MoTe_2, respectively at telecom-band ultrafastpump laser. Lastly, based on polymorphic engineering on MoTe_2, a Schottkyphotodiode with a high photoresponsivity of 90 AW~(?1) is demonstrated. Thisstudy proposes facile polymorphic engineered structures that will greatly benefitrealizing integrated photonics and optoelectronic circuits.

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