Switchable and Reversible p~+/n~+ Doping in 2D Semiconductors by Ionic 2D Minerals

Rongjie Zhang; Yujie Sun; Wenjun ChenShilong ZhaoJingwei WangChangjiu TengBilu LiuHui-Ming Cheng

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Switchable and Reversible p~+/n~+ Doping in 2D Semiconductors by Ionic 2D Minerals

机译：Switchable and Reversible p~+/n~+ Doping in 2D Semiconductors by Ionic 2D Minerals

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2D semiconductors are promising for fabricating miniaturized and flexibleelectronic devices. The manipulation of polarities in 2D semiconductors iskey to fabricate functional devices and circuits. However, the switchableand reversible control of polarity in 2D semiconductors is challenging dueto their ultrathin body. Herein, a reversible and non-destructive method isdeveloped to dope 2D semiconductors by using ionic 2D minerals as theelectrostatic gating. The 2D semiconductor channel can be reversibly transformedbetween n~+ and p~+ types with carrier concentrations of 1.59 × 10~(13) and6.82 × 10~(12) cm~(?2), respectively. With the ability to in situ control carrier typeand concentration in 2D semiconductors by ionic gating, a reversible PN/NP junction and programmable logic gate are demonstrated in such devices.This 2D mineral materials-based ionic doping approach provides an alternativemethod for achieving multi-functional and complex circuits in an all-2Dmaterial flatform.

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来源
《Advanced functional materials》 |2023年第23期|2213809.1-2213809.7|共7页
作者
Rongjie Zhang; Yujie Sun; Wenjun ChenShilong ZhaoJingwei WangChangjiu TengBilu LiuHui-Ming Cheng;
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Shenzhen Geim Graphene CenterTsinghua-Berkeley Shenzhen Institute and Institute of MaterialsResearchShenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055, P. R. China;

School of Electronic Information EngineeringFoshan UniversityFoshan 528000, P. R. China;

Shenzhen Geim Graphene CenterTsinghua-Berkeley Shenzhen Institute and Institute of MaterialsResearchShenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055, P. R. China Shenyang National Laboratory for Materials ScienceInstitute of Metal;

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正文语种英语
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2D materials; 2D mica; 2D minerals; carrier concentration doping; carrier types; functional devices; ionic gating;

Switchable and Reversible p~+/n~+ Doping in 2D Semiconductors by Ionic 2D Minerals

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