The composition, structure and properties, as well as the current-voltage characteristics (CVCs) of nanostructured SZO films were studied. These films were fabricated by electron-beam evaporation of a layered structure consisting of two 50-nm-thick SiO2 films between which a Zn film with a thickness of 10-50 nm was deposited. Then these structures were annealed in air in the temperature range from 300 to 400 degrees C with a step of 50 degrees C for 30 min. Sandwiched (gold or platinum) electrodes were used. It was found that a granular structure with a grain size of 50-100 nm of SiO2 composition was formed on the sample surface after deposition. Upon annealing a crystalline cubic ZnO phase with the (111) orientation was formed in the sample. After annealing at 400 degrees C ZnO clusters with characteristic exciton emission at a wavelength of 384 nm were detected in the sample; the grain size on the sample surface increased to 100-200 nm. CVCs with a hysteresis were obtained for SZO films annealed at 400 degrees C.
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