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首页> 外文期刊>Advanced functional materials >En Route to Wide Area Emitting Organic Light-Emitting Transistors for Intrinsic Drive-Integrated Display Applications: A Comprehensive Review
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En Route to Wide Area Emitting Organic Light-Emitting Transistors for Intrinsic Drive-Integrated Display Applications: A Comprehensive Review

机译：En Route to Wide Area Emitting Organic Light-Emitting Transistors for Intrinsic Drive-Integrated Display Applications: A Comprehensive Review

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摘要

Organic light-emitting transistors (OLET) evolved from the fusion of the switching functionality of field-effect transistors (FET) with the light-emitting characteristics of organic light-emitting diode (OLED) that can simplify the active-matrix pixel device architecture and hence offer a promising pathway for future flat panel and flexible display technology. This review systematically analyzes the key device/molecular engineering tactics that assist in improving the electrode edge narrow emission to wide-area emission for display applications via three different topics, that is, narrow to wide-area emission, vertical architecture, and impact of high-kappa dielectric on the device performance. Source-drain electrode engineering such as symmetric/asymmetric, planar/non-planar arrangement, semitransparent nature, multilayer approach comprising charge transport, and work function modification layers enable widening the emission zone. Vertical OLET architecture offers short channel lengths with a high aperture ratio, pixel type area emission, and stable light-emitting area. Transistors utilizing high-kappa dielectric materials have assisted in lowering the operating voltage, enhancing luminance and air stability. The promising development in achieving wide-area emission provides a solid basis for constructing OLET research toward display applications; however, it relies on developing highly luminescent and fast charge transporting materials, suitable semitransparent source/drain electrodes, high-kappa -dielectrics, and device architectural engineering.

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