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Extrinsic Localized Excitons in Patterned 2D Semiconductors

机译：Extrinsic Localized Excitons in Patterned 2D Semiconductors

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摘要

A new localized excitonic state is demonstrated in patterned monolayer2D semiconductors. The signature of an exciton associated with that state isobserved in the photoluminescence spectrum after electron beam exposureof several 2D semiconductors. The localized state, which is distinguished bynon-linear power dependence, survives up to room temperature and is patternabledown to 20 nm resolution. The response of the new exciton to thechanges of electron beam energy, nanomechanical cleaning, and encapsulationvia multiple microscopic, spectroscopic, and computational techniquesis probed. All these approaches suggest that the state does not originate fromirradiation-induced structural defects or spatially non-uniform strain, as commonlyassumed. Instead, it is shown to be of extrinsic origin, likely a chargetransfer exciton associated with the organic substance deposited onto the2D semiconductor. By demonstrating that structural defects are not requiredfor the formation of localized excitons, this work opens new possibilities forfurther understanding of localized excitons as well as their use in applicationsthat are sensitive to the presence of defects, e.g. chemical sensing andquantum technologies.

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