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首页> 外文期刊>journal of the korean ceramic society >Effect of nitride addition on the electrical and thermal properties of pressureless solid-state sintered SiC ceramics
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Effect of nitride addition on the electrical and thermal properties of pressureless solid-state sintered SiC ceramics

机译：Effect of nitride addition on the electrical and thermal properties of pressureless solid-state sintered SiC ceramics

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摘要

SiC-0-8wt% Si3N4 and SiC-0-10 wt% TiN ceramics were fabricated via pressureless solid-state sintering using B4C and C as sintering aids. Si3N4 and TiN addition up to 4 and 1 wt%, respectively exhibited > 97% relative density. Thermal decomposition of nitrides and subsequent N-2 evolution during sintering resulted in the low relative densities at the high levels of nitride content. This study demonstrated that 0.5-1 wt% nitride addition led to three orders of magnitude increase (10(5) -> 10(8) cm(-3)) in carrier density due to nitride-derived N-doping in SiC lattice and, consequently an order of magnitude decrease (10(7) -> 10(6) ohm center dot cm) in the electrical resistivity. An increased thermal resistance at SiC-nitride heterogeneous grain boundaries was responsible for similar to 32% decrease in thermal conductivity with 1 wt% nitride addition.

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