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Top Stack Optimization for Cu_2BaSn(S, Se)_4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6

机译:Top Stack Optimization for Cu_2BaSn(S, Se)_4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6

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摘要

Earth-abundant and air-stable Cu_2BaSnS_(4?x)Se_x (CBTSSe) and related thinfilmabsorbers are regarded as prospective options to meet the increasingdemand for low-cost solar cell deployment. Devices based on vacuum-depositedCBTSSe absorbers have achieved record power conversion efficiency(PCE) of 5.2% based on a conventional device structure using CdS bufferand i-ZnO/indium tin oxide (ITO) window layers, with open-circuit voltage(VOC) posing the major bottleneck for improving solar cell performance.The current study demonstrates a >20% improvement in VOC (from 0.62 to0.75 V) and corresponding enhancement in PCE (from 5.1% to 6.2% withoutantireflection coating; to 6.5% with MgF2 antireflection coating) for solutiondepositedCBTSSe solar cells. This performance improvement is realized byintroducing an alternative successive ionic layer adsorption and reactiondepositedZn_(1?x)Cd_xS buffer combined with sputtered Zn_(1?x)Mg_xO/Al-dopedZnO window/top contact layer, which offers lower electron affinities relativeto the conventional CdS/i-ZnO/ITO stack and better matching with the lowelectron affinity of CBTSSe. A combined experimental (temperature- and lightintensity-dependent VOC measurements) and device simulation (SCAPS-1D)evaluation points to the importance of addressing relative band offsets forboth the buffer and window layers relative to the absorber in mitigating interfacialrecombination and optimizing CBTSSe solar cell performance.

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