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High Radiance of Perovskite Light-Emitting Diodes Enabled by Perovskite Heterojunctions

机译：High Radiance of Perovskite Light-Emitting Diodes Enabled by Perovskite Heterojunctions

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Metal-halide perovskites (MHPs) have made incredible achievements in the past few years, especially in the area of perovskite light-emitting diodes (PeLEDs). Nevertheless, hole transport layers (HTLs) used in most highly efficient PeLEDs usually have low hole mobilities in the range of 10~(?4)– 10?6 cm~2 V~(?1) s~(?1), much lower than that of MHPs, resulting in severe roll-off and low radiance of the devices. Here, methylammonium lead iodide (MAPbI_3) is successfully deposited on top of methylammonium lead chloride (MAPbCl_3) using orthogonal solvent to form heterojunction PeLEDs (HJ-PeLEDs). Due to the high hole mobility of MAPbCl_3 ≈42 cm~2 V~(?1) s~(?1), the HJ-PeLEDs exhibit a peak external quantum efficiency of 10.7% and a high radiance of 157 W sr~(?1) m~(?2) at a low applied voltage of 3.9 V. Furthermore, the large-area (28 cm~2) HJ-PeLEDs made by blade coating shows a uniform and high radiance of ≈180 W sr~(?1) m~(?2). This work provides a novel strategy to fabricate bright and large-area PeLEDs to meet the requirements of commercial applications.

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