For deposition technology using plasma, it plays an important role in improving coatings deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductively coupled plasma (ICP) antennas and use properties to improve the properties of coating film using ICP-assisted magnetron sputtering (ICPMS). This sputtering method presents characteristics such as denser and smoother microstructure, better mechanical properties, etc., because it enables low temperature processes and high ionization rates at low energy. Further, The crystal structure of the coating film can also be controlled.
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