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Inkjet Printing Flexible Thermoelectric Devices Using Metal Chalcogenide Nanowires

机译:Inkjet Printing Flexible Thermoelectric Devices Using Metal Chalcogenide Nanowires

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摘要

Development of flexible thermoelectric devices offers exciting opportunitiesfor wearable applications in consumer electronics, healthcare,human–machine interface, etc. Despite the increased interests and effortsin nanotechnology-enabled flexible thermoelectrics, translating the superiorproperties of thermoelectric materials from nanoscale to macroscale andreducing the manufacturing costs at the device level remain a major challenge.Here, an economic and scalable inkjet printing method is reportedto fabricate high-performance flexible thermoelectric devices. A generaltemplated-directed chemical transformation process is employed to synthesizeseveral types of 1D metal chalcogenide nanowires (e.g., Ag_2Te, Cu_7Te_4,and Bi_2Te_(2.7)Se_(0.3)). These nanowires are made into inks suitable for inkjetprinting by dispersing them in ethanol without any additives. As a showcasefor thermoelectric applications, fully inkjet-printed Ag_2Te-based flexiblefilms and devices are prepared. The printed films exhibit a power factor of493.8 μW m~(?1)K~(?2) at 400 K and the printed devices demonstrate a maximumpower density of 0.9 μW cm~(?2) K~(?2), both of which are significantly higher thanthose reported in state-of-the-art inkjet-printed thermoelectrics. The protocolsof metal chalcogenide ink formulations, as well as printing are general andextendable to a wider range of material systems, suggesting the great potentialof this printing platform for scalable manufacturing of next-generation,high-performance flexible thermoelectric devices.

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