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首页> 外文期刊>journal of the korean ceramic society >Significantly enhanced charge transport in polysilicon by alleviating grain boundary scattering through interface control using reduced graphene oxide
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Significantly enhanced charge transport in polysilicon by alleviating grain boundary scattering through interface control using reduced graphene oxide

机译：Significantly enhanced charge transport in polysilicon by alleviating grain boundary scattering through interface control using reduced graphene oxide

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Here, we introduce interface control of polycrystalline silicon (poly-Si) using reduced graphene oxide (RGO) as a promising way to minimize the grain boundary scattering for the enhancement of the charge transport properties in poly-Si. In this experiment, Si powder was prepared by pulverizing an As-doped Si wafer using high-energy ball milling. The Si powder was coated with RGO, and the composite was consolidated by spark plasma sintering. The interface-controlled Si (Si-RGO) composite exhibited significantly enhanced charge transport properties compared with bulk poly-Si. The release of trapped electrons through interface control using RGO reduced the grain boundary barrier height and resulted in a negative temperature dependence of the mobility in the Si-RGO composite. Consequently, the mobility and carrier concentration of the Si-RGO composite were simultaneously enhanced through interface control using RGO.

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