Recent Progress of Flexible Photodetectors Based on Low-Dimensional Ⅱ–Ⅵ Semiconductors and Their Application in Wearable Electronics

Mingfa Peng; Zhen Wen; Xuhui Sun

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Recent Progress of Flexible Photodetectors Based on Low-Dimensional Ⅱ–Ⅵ Semiconductors and Their Application in Wearable Electronics

机译：Recent Progress of Flexible Photodetectors Based on Low-Dimensional Ⅱ–Ⅵ Semiconductors and Their Application in Wearable Electronics

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Flexible photodetectors exhibit many advantages such as a good bendability,foldability, and even stretchability as well as weight light, which havetriggered a widely concerned in wearable electronics including wearablemonitoring, wearable image sensing, self-powered integrated electronics,etc. Recently, various Ⅱ-Ⅵ semiconductor nanostructures have becomepromising candidates in flexible photodetectors due to their unique characteristics,such as direct bandgap semiconductors, excellent optical andelectric properties, high quantum efficiency, and inherent mechanical flexibility.Herein, the most recent progress on low-dimensional (0D, 1D, 2D, andrelated heterostructures) Ⅱ-Ⅵ semiconductors based flexible photodetectorsand their application in wearable electronic is reviewed. First, a brief introductionof the main sensing mechanisms and key figures of merits for photodetectorsis presented. Then, the recent progresses on flexible photodetectorsare provided, in which the functional materials synthesis methods are alsodiscussed. More importantly, the applications of the flexible photodetectorsare summarized, including wearable monitoring sensors, image sensors, andself-powered integrated wearable electronics. Finally, the challenges and thefuture research direction of the flexible photodetectors are discussed, meanwhilethe outlook for the development of flexible photodetectors in the futureintegration of wearable electronic is also provided.

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来源
《Advanced functional materials》 |2023年第11期|2211548.1-2211548.24|共24页
作者
Mingfa Peng; Zhen Wen; Xuhui Sun;
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作者单位

School of Electronic and Information EngineeringJiangsu Province Key Laboratory of Advanced Functional MaterialsChangshu Institute of TechnologyChangshu, Jiangsu 215500, P. R. China;

Institute of Functional Nano & Soft Materials (FUNSOM)and Jiangsu Key Laboratory for Carbon-based Functional Materialsand DevicesSoochow UniversitySuzhou, Jiangsu 215123, P. R. China;

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正文语种英语
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Ⅱ–Ⅵ semiconductors; flexible photodetectors; image sensing; selfpower; wearable electronics;

Recent Progress of Flexible Photodetectors Based on Low-Dimensional Ⅱ–Ⅵ Semiconductors and Their Application in Wearable Electronics

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