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首页> 外文期刊>Journal of power electronics: A publications of the Korean Institute of Power Electronics >A snapback-free reverse-conducting IGBT with multiple extraction channels
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A snapback-free reverse-conducting IGBT with multiple extraction channels

机译：A snapback-free reverse-conducting IGBT with multiple extraction channels

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Abstract A novel Reverse-Conducting Insulated Gate Bipolar Transistor (RC-IGBT) with Multiple Extraction Channels (MEC) is proposed and investigated. The MEC is characterized by two transistors NPN1 (Nbuffer/Pbarrier/Ncollector), NPN2 (Nbuffer/Pfloat/Npoly) and short Rgap in the collector. The P-Collector, N-Collector, polysilicon and Rgap are shorted together, thus the NPN1, NPN2 and Rgap are parallel with the PNP transistor (Pbody/Nbuffer/Pcollector). At the forward conduction, the unipolar mode is effectively suppressed by the electron barriers P-barrier (the base of the NPN1) and P-float (the base of the NPN2), thus the snapback effect can be completely eliminated. At the turn-off, the electrons are quickly extracted by three channels of the NPN1, NPN2 and Rgap, thus the Eoff can be remarkably decreased. Results show at the same Von of 2.8?V, the Eoff of the MEC RC-IGBT is reduced by 20%, 37%, 45% and 59% compared to AB, FPL, DFS and TOC RC-IGBT, respectively. Therefore the excellent trade-off characteristics with snapback free are achieved.

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