Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

Das S.; Lenka T. R.; Talukdar F. A.Velpula R. T.Nguyen H. P. T.

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Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

机译：Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

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摘要

A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material that promises enhanced efficiency by 30.1% and reduced efficiency droop of 0.491%. The enhanced power and efficiency of the LED with HfO2/SiO2 doped bi-layer are attributed to the significant minimization of overflow of electrons which is fundamentally responsible for efficiency degradation through p-GaN region. In this article encapsulant material based on nano HfO2/SiO2 not only enhances light extraction but opens a broad new range of encapsulant engineering capabilities composites. Our designed LED is generated from a monolithic composition of blue and yellow spectrum which eventually creates the white light. This minimizes the problems related to multiple numbers of LEDs, green gap and phosphor color rendering.

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《Optical and Quantum Electronics》 |2023年第1期|共13页
作者
Das S.; Lenka T. R.; Talukdar F. A.Velpula R. T.Nguyen H. P. T.;
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作者单位

Natl Inst Technol Silchar;

New Jersey Inst Technol;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
Light-emitting diode (LED); Electron blocking layer (EBL); Multiple quantum well (MQW); Refractive index (RI); External Quantum Efficiency (EQE); Nanoparticles (NP); LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; EXTRACTION; EFFICIENCY; FABRICATION; DIELECTRICS; SILICON; HFO2;

Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

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