机译:Switching-behavior improvement in HfO2/ZnO bilayer memory devices by tailoring of interfacial and microstructural characteristics
Nanjing Univ Posts & Telecommun;
Nanjing Univ Sci & Technol;
HfO2; ZnO bilayer; sputtering; bipolar switching; oxygen vacancies; RRAM; ELECTRICAL-PROPERTIES; RESISTIVE MEMORY; HIGH-PERFORMANCE; MEMRISTOR;