Intergranular Diffusion-Assisted Liquid-Phase Chemical Vapor Deposition for Wafer-Scale Synthesis of Patternable 2D Semiconductors

Jihyung Seo; Jiha Kim; Junghyun LeeDonghwan KooGyujeong JeongYunseong ChoiEun bin SonHyesung Park

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Intergranular Diffusion-Assisted Liquid-Phase Chemical Vapor Deposition for Wafer-Scale Synthesis of Patternable 2D Semiconductors

机译：Intergranular Diffusion-Assisted Liquid-Phase Chemical Vapor Deposition for Wafer-Scale Synthesis of Patternable 2D Semiconductors

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摘要

2D semiconductors have attracted considerable interest in the quest to overcome some of the challenges associated with 3D bulk semiconductors. The application of 2D semiconductors in transistor-based electronic devices requires a reliable patterning technology with thickness controllability for continued transistor scaling. In this study, a facile synthesis approach is developed that allows direct patterning of transition metal dichalcogenides (TMDs) with thickness controllability at the wafer scale through intergranular diffusion-assisted liquid-phase chemical vapor deposition using a sacrificial metal layer. By depositing a liquid-phase transition metal precursor onto the pre-patterned polycrystalline Ni/SiO_2 substrate, a directly patterned transition metal layer can be formed on SiO_2 via intergranular diffusion through the Ni grain boundaries, enabling the growth of patternable TMDs with a controllable thickness. The as-synthesized directly patterned WS_2 transistor exhibits typical n-type transport behavior with a stable photoswitching performance. The proposed patterning technique can make the application of 2D semiconductors in advanced electronic devices more viable.

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来源
《Advanced functional materials》 |2022年第44期|2205695.1-2205695.8|共8页
作者
Jihyung Seo; Jiha Kim; Junghyun LeeDonghwan KooGyujeong JeongYunseong ChoiEun bin SonHyesung Park;
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作者单位

Department of Materials Science and Engineering Graduate School of Semiconductor Materials and Devices Engineering Perovtronics Research Center Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology Ulsan 44919, Republi;

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正文语种英语
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chemical vapor deposition; direct patterning; intergranular diffusion; patternable 2D semiconductors; thickness controllability; transition metal dichalcogenides; wafer-scale electronics;

Intergranular Diffusion-Assisted Liquid-Phase Chemical Vapor Deposition for Wafer-Scale Synthesis of Patternable 2D Semiconductors

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