机译:Analysis of DC and RF performance of Al0.31Ga0.69N/Al0.1Ga0.9N/ β‐Ga2O3 double quantum well HEMT on silicon carbide substrate
KIT ‐ KalaignarKarunanidhi Institute of Technology;
Karunya Institute of Technology and Sciences;
Sahrdaya College of Engineering & TechnologySri Krishna College of Engineering and Technology;
breakdown voltage; double‐channel; HEMT; power applications; RF applications; β‐Ga2O3;