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首页> 外文期刊>Advanced Materials >Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band
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Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band

机译:Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band

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摘要

Although 2D materials are widely explored for data storage and neuromorphiccomputing, the construction of 2D material-based memory deviceswith optoelectronic responsivity in the short-wave infrared (SWIR) region forin-sensor reservoir computing (RC) at the optical communication band stillremains a big challenge. In this work, an electronic/optoelectronic memorydevice enabled by tellurium-based 2D van der Waals (vdW) heterostructureis reported, where the ferroelectric CuInP_2S_6 and tellurium channel endowthis device with both the long-term potentiation/depression by voltage pulsesand short-term potentiation by 1550 nm laser pulses (a typical wavelengthin the conventional fiber optical communication band). Leveraging the richdynamics, a fully memristive in-sensor RC system that can simultaneouslysense, decode, and learn messages transmitted by optical fibers is demonstrated.The reported 2D vdW heterostructure-based memory featuring boththe long-term and short-term memory behaviors using electrical and opticalpulses in SWIR region has not only complemented the wide spectrum ofapplications of 2D materials family in electronics/optoelectronics but alsopaves the way for future smart signal processing systems at the edge.

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  • 来源
    《Advanced Materials》 |2023年第20期|2211598.1-2211598.12|共12页
  • 作者单位

    Department of Materials Science and EngineeringCity University of Hong KongHong Kong 999077, P. R. China,Department of Electrical EngineeringCity University of Hong KongHong Kong 999077, P. R. China;

    Department of Electrical and Electronic EngineeringUniversity of Hong KongHong Kong 999077, P. R. China, School of MicroelectronicsSouthern University of Science and TechnologyShenzhen, Guangdong 518055, P. R. China;

    School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Singapore 639798, SingaporeDepartment of Electrical EngineeringCity University of Hong KongHong Kong 999077, P. R. ChinaDepartment of ChemistryCity University of Hong KongHong Kong 999077, P. R. ChinaDepartment of Mechanical EngineeringCity University of Hong KongHong Kong 999077, P. R. ChinaDepartment of Materials Science and EngineeringCity University of Hong KongHong Kong 999077, P. R. ChinaDepartment of Electrical and Electronic EngineeringUniversity of Hong KongHong Kong 999077, P. R. ChinaState Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China (UESTC)Chengdu 610054, P. R. ChinaDepartment of Mechanical EngineeringCity University of Hong KongHong Kong 999077, P. R. China,Department of Mechanical and Aerospace EngineeringHong Kong University of Science and TechnologyHong Kong 999077, P. R. ChinaSchool of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Singapore 639798, Singapore, School of Electrical and Electronics EngineeringNanyang Technological UniversitySingapore 639798, SingaporeSchool of MicroelectronicsSouthern University of Science and TechnologyShenzhen, Guangdong 518055, P. R. ChinaDepartment of ChemistryCity University of Hong KongHong Kong 999077, P. R. China, Hong Kong Branch of National Precious Metals Material EngineeringResearch Center (NPMM)City University of Hong KongHong Kong, P. R. China, Shenzhen Research InstituteCity UnDepartment of ChemistryCity University of Hong KongHong Kong 999077, P. R. China, Shenzhen Research InstituteCity University of Hong KongShenzhen 518057, P. R. China;

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  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

    2D tellurium; in-sensor reservoir computing; optical communication band; optoelectronic memory device; van der Waals heterostructures;

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