Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films

Donghan Kim; Younsik Kim; Byungmin SohnMinsoo KimBongju KimTae Won NohChangyoung Kim

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Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films

机译：Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films

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Divergent density of states (DOS) can induce extraordinary phenomena suchas significant enhancement of superconductivity and unexpected phasetransitions. Moreover, van Hove singularities (VHSs) lead to divergent DOSin 2D systems. Despite recent interest in VHSs, only a few controllable caseshave been reported to date. In this work, by utilizing an atomically ultra-thinSrRuO_3 film, the electronic structure of a 2D VHS is investigated with angleresolvedphotoemission spectroscopy and transport properties are controlled.By applying electric fields with alkali metal deposition and ionic-liquidgating methods, the 2D VHS and the sign of the charge carrier are preciselycontrolled. Use of a tunable 2D VHS in an atomically flat oxide film couldserve as a new strategy to realize infinite DOS near the Fermi level, therebyallowing efficient tuning of electric properties.

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《Advanced Materials》 |2023年第17期|2207188.1-2207188.7|共7页
作者
Donghan Kim; Younsik Kim; Byungmin SohnMinsoo KimBongju KimTae Won NohChangyoung Kim;
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Center for Correlated Electron SystemsInstitute for Basic ScienceSeoul 08826, South Korea,Department of Physics and AstronomySeoul National UniversitySeoul 08826, South Korea;

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正文语种英语
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angle-resolved photoemission spectroscopy; electronic structure; Hall effect; ionic liquid gating; oxide thin film; ruthenate; transport measurement; ultrathin film; van Hove singularity (VHS);

Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films

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