Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping

Deng Zou; Zhenfei He; Ming ChenLizhi YanYifan GuoGuoyun GaoCan LiYingzhe PiaoXing ChengPaddy K.L. Chan

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Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping

机译：Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping

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Organic field-effect transistors (OFETs) based on 2D monolayer organic semiconductors(OSC) have demonstrated promising potentials for various applications,such as light emitting diode (LED) display drivers, logic circuits, andwearable electrocardiography (ECG) sensors. To date, the fabrications of thisclass of highly crystallized 2D organic semiconductors (OSC) are dominatedby solution shearing. As these organic active layers are only a few molecularlayers thick, their compatibilities with conventional thermal evaporated topelectrodes or sophisticated photolithography patterning are very limited,which also restricts their device density. Here, an electrode transfer stampand a semiconductor patterning stamp are developed to fabricate OFETs withchannel lengths down to 3 μm over a large area without using any chemicalsor causing any damage to the active layer. 2D 2,9-didecyldinaphtho[2,3-b:2′,3′-f ]thieno[3,2-b]thiophene (C_(10)-DNTT) monolayer OFETs developed bythis new approach shows decent performance properties with a low thresholdvoltage (VTH) less than 0.5 V, intrinsic mobility higher than 10 cm~2 V~(?1) s~(?1) anda subthreshold swing (SS) less than 100 mV dec~(?1). The proposed patterningapproach is completely comparable with ultraflexible parylene substrate lessthan 2 μm thick. By further reducing the channel length down to 2 μm andusing the monolayer OFET in an AC/DC rectifying circuit, the measuredcutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newlyproposed electrode transfer and patterning stamps have addressed thelong-lasting compatibility problem of depositing electrodes onto 2D organicmonolayer and the semiconductor patterning. It opens a new path to reducethe fabrication cost and simplify the manufacturing process of high-densityOFETs for more advanced electronic or biomedical applications.

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来源
《Advanced Materials》 |2023年第20期|2211600.1-2211600.10|共10页
作者
Deng Zou; Zhenfei He; Ming ChenLizhi YanYifan GuoGuoyun GaoCan LiYingzhe PiaoXing ChengPaddy K.L. Chan;
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作者单位

Department of Mechanical EngineeringThe University of Hong KongPokfulam Road, Hong Kong, P. R. China, Advanced Biomedical Instrumentation CentreHong Kong Science ParkShatin, Hong Kong, P. R. China;

Department of Mechanical EngineeringThe University of Hong KongPokfulam Road, Hong Kong, P. R. China;

Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen 518055, P. R. ChinaDepartment of Electrical EngineeringThe University of Hong KongPokfulam Road, Hong Kong, P. R. ChinaDepartment of Mechanical EngineeringThe University of Hong KongPokfulam Road, Hong Kong, P. R. China, Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen 518055, P. R. China;

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正文语种英语
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electrode transfer; monolayer organic semiconductor; mica patterning; Organic field-effect transistor; solution shearing;

Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping

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