机译:High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide Mxene
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA|149 Commonwealth Dr, Menlo Pk, CA 94025 USA;
KTH Royal Inst Technol, Dept Fibre & Polymer Technol, Sch Engn Sci Chem Biotechnol & Hlth, Tekn Ringen 56, S-10044 Stockholm, Sweden;
Drexel Univ, AJ Drexel Nanomat Inst, Philadelphia, PA 19104 USA|Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
2D materials; analog resistive memories; electrochemical random-access memories; linear switching; mixed ionic-electronic conductors; molecular self-assembly; MXenes; neuromorphic computing;