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首页> 外文期刊>Nano letters >Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS2 Monolayer
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Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS2 Monolayer

机译：Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS2 Monolayer

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Transition-metal dichalcogenides exhibit strongphoton absorption characteristics in the band nesting region(denoted as C-exciton) due to intrinsic van Hove singularitiesdespite being atomically thin. However, because of unique parallelband structure and ineluctably unfavorable recombination process,only a small fraction of the hot carriers from C-excitons areconverted into optically active band-edge excitons via inherentrelaxation-paths. The resultant photoluminescence quantum yield(PLQY) is severely suppressed for the resonant excitation of C-exciton. To overcome this limitation, we have designed doubletype-I band alignments to construct a band nesting bypass in amonolayer WS2/CdS quantum dot heterostructure for cooling the C-excitons. Transient optical measurements confirmed that thehot carriers from the C-excitons were effectively transferred from WS2to CdS with an efficiency of 50% and subsequently back to theWS2band-edge to form A-excitons over an ultrafast subpicosecond time scale, accompanied by a record high PLQY of similar to 11.1% fornear-resonance C-exciton excitation

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