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首页> 外文期刊>Advanced functional materials >Reversible Room Temperature Brittle-Plastic Transition in Ag_2Te_(0.6)S_(0.4) Inorganic Thermoelectric Semiconductor
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Reversible Room Temperature Brittle-Plastic Transition in Ag_2Te_(0.6)S_(0.4) Inorganic Thermoelectric Semiconductor

机译：Reversible Room Temperature Brittle-Plastic Transition in Ag_2Te_(0.6)S_(0.4) Inorganic Thermoelectric Semiconductor

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摘要

Inorganic semiconductors with superior plasticity are highly desired incurrent flexible electronics, which however are rarely discovered owing totheir intrinsic covalent and ionic bonds. The Ag_2Te_(0.6)S_(0.4) semiconductor withan amorphous phase has recently been reported to exhibit plastic deformability.In this study, the reversible brittle-plastic transition is found in thisinorganic semiconductor, and the plasticity of the Ag_2Te_(0.6)S_(0.4) sample ishighly related to the phase structures. The Ag_2Te_(0.6)S_(0.4) with a monoclinicphase exhibits a brittle behavior, while the one with cubic-crystalline/amorphousstructure shows exceptional plasticity with a compressive strain ofover 80%. Significantly, the reversible plastic-brittle transition in Ag_2Te_(0.6)S_(0.4)inorganic semiconductor can be achieved by simple heat treatment. Besidesthe plasticity, the cubic-crystalline/amorphous Ag_2Te_(0.6)S_(0.4) composites alsopossess good thermoelectric performance. This study uncovers the influenceof phase structure on the mechanical properties of Ag_2Te_(0.6)S_(0.4) and realizesthe reversible brittle-plastic transition, facilitating its prospective applicationin flexible/wearable electronics.

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