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Roughness Suppression in Electrochemical Nanoimprinting of Si for Applications in Silicon Photonics

机译：Roughness Suppression in Electrochemical Nanoimprinting of Si for Applications in Silicon Photonics

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摘要

Metal-assisted electrochemical nanoimprinting (Mac-Imprint) scales the fabricationof micro- and nanoscale 3D freeform geometries in silicon and holdsthe promise to enable novel chip-scale optics operating at the near-infraredspectrum. However, Mac-Imprint of silicon concomitantly generates mesoscaleroughness (e.g., protrusion size ≈45 nm) creating prohibitive levels of lightscattering. This arises from the requirement to coat stamps with nanoporousgold catalyst that, while sustaining etchant diffusion, imprints its pores (e.g.,average diameter ≈42 nm) onto silicon. In this work, roughness is reduced tosub-10 nm levels, which is in par with plasma etching, by decreasing pore sizeof the catalyst via dealloying in far-from equilibrium conditions. At this level,single-digit nanometric details such as grain-boundary grooves of the catalystare imprinted and attributed to the resolution limit of Mac-Imprint, whichis argued to be twice the Debye length (i.e., 1.7 nm)—a finding that broadlyapplies to metal-assisted chemical etching. Last, Mac-Imprint is employedto produce single-mode rib-waveguides on pre-patterned silicon-on-insulatorwafers with root-mean-square line-edge roughness less than 10 nm while providingdepth uniformity (i.e., 42.9 ± 5.5 nm), and limited levels of silicon defectformation (e.g., Raman peak shift < 0.1 cm~(?1)) and sidewall scattering.

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