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首页> 外文期刊>Advanced Materials >Lattice-Mismatch-Driven Small-Angle Moire Twists in Epitaxially Grown 2D Vertical Layered Heterostructures
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Lattice-Mismatch-Driven Small-Angle Moire Twists in Epitaxially Grown 2D Vertical Layered Heterostructures

机译:Lattice-Mismatch-Driven Small-Angle Moire Twists in Epitaxially Grown 2D Vertical Layered Heterostructures

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摘要

Artificially introduced small twist angles at the interfaces of vertical layeredheterostructures (VLHs) have allowed deterministic tuning of electronic andoptical properties such as strongly correlated electronic phases and Moiréexcitons. But creating a Moire twist in van der Waals (vdWs) systems bymanual stacking is challenging in reproducibility, uniformity, and accuracy ofthe twist angle, which hinders future studies. Here, it is demonstrated thatcontrary to the commonly believed 0°-orientation in vdWs epitaxy, these VLHsshow small twist angles controlled by the low-order commensurate phasewith low energy and local atomic relaxation. A commensurate multilevel mapis proposed to predict possible orientations. Remarkably, high-mismatchVLHs show discrete and sometimes non-zero twist angles dependent on theirnatural mismatch value. Such framework is experimentally confirmed in fiveepitaxially grown VLHs under high-angle annular dark field scanning transmissionelectron microscopy (HAADF-STEM), and can provide significantinsights for large-scale engineering of twist angle in VLHs.

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