Temperature dependent charge transport in electrostatically doped polybenzimidazobenzophenanthroline thin films

Alejandro J. Cruz‐Arzon; William Serrano‐Garcia; Nicholas J. PintoNikita GuptaAlan T. Charlie Johnson

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Temperature dependent charge transport in electrostatically doped polybenzimidazobenzophenanthroline thin films

机译：Temperature dependent charge transport in electrostatically doped polybenzimidazobenzophenanthroline thin films

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Abstract Charge transport in electrostatically doped poly[benzimidazobenzophenanthroline]‐BBL thin films in a field‐effect transistor geometry were investigated in the temperature range 150 K 335 K which depended on Vg. Enhanced electron delocalization combined with increased carrier density could be responsible for this “metallic‐like” behavior. Our results show that the existence of deep traps with multiple energy distributions, combined with increased carrier density led to the unusual temperature dependence of charge transport observed in BBL.

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《Journal of Applied Polymer Science》 |2023年第8期|n/a-n/a|共10页
作者
Alejandro J. Cruz‐Arzon; William Serrano‐Garcia; Nicholas J. PintoNikita GuptaAlan T. Charlie Johnson;
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作者单位

University of Puerto Rico at Humacao;

University of South Florida;

University of Pennsylvania;

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原文格式 PDF
正文语种英语
中图分类高分子化合物工业（高聚物工业）;
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conducting polymers; crystallization; kinetics; polyimides; thermal properties;

Temperature dependent charge transport in electrostatically doped polybenzimidazobenzophenanthroline thin films

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