Mg_2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

Sukanta Kumar Swain; Sangita Kumari Swain; Shashi Kant Sharma

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Mg_2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

机译：Mg_2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

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We present the results of a simulation study of Mg_2Si heterojunction-based SOI TFETs using TCAD. Mg_2Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (I_(ON))> off-current (I_(OFF)), and subthreshold swing were found to be 1.089 × 10~(-5)A/μm, 8.632 × 10~(-17)A/μm, 1.26× 10~(11), and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.

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《Journal of computational electronics》 |2023年第4期|990-998|共9页
作者
Sukanta Kumar Swain; Sangita Kumari Swain; Shashi Kant Sharma;
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作者单位

Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Ranchi, Jharkhand 834010, India;

Center of Excellence in Nanoscience and Technology for Development of Sensor (CoENSTds), Berhampur University, Berhampur, Odisha 760007, India;

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正文语种英语
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Band-to-band tunneling; Subthreshold swing; Electron quasi-Fermi potential; TFET;

Mg_2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

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