Investigations on the effect of separate confinement heterostructure width on the distortion performance of tunnel injection based transistor laser

Vinodhini S. V.; Piramasubramanian S.; Ganesh Madhan M.

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Investigations on the effect of separate confinement heterostructure width on the distortion performance of tunnel injection based transistor laser

机译：Investigations on the effect of separate confinement heterostructure width on the distortion performance of tunnel injection based transistor laser

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Abstract In this work, the effect of SCH width on the modulation and distortion characteristics of tunnel injection transistor laserare analyzed. The rate equations of transistor laser are numerically solved using fourth order Runge Kutta method and the threshold current is found to reduce for increase in SCH width, in case of narrow SCH layer. A maximum modulation bandwidth of 21.8 GHz is predicted for aSCH width of 21 nm. However, at SCH width of 30 nm, a modulation depth of 0.44 is obtained, which is maximumcompared to other SCH widths. A minimum third order intermodulation distortion of − 39.6 dBc is obtained for SCH width of 21 nm. Further, anSFDR value of 79.6 dB Hz2/3 is observedfor the same width. Hence 21 nm SCH width is identified as an optimum value, which leads to minimum distortion and maximum bandwidth, for the TI-TL structure considered in this work.

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来源
《Optical and Quantum Electronics》 |2023年第9期|共5页
作者
Vinodhini S. V.; Piramasubramanian S.; Ganesh Madhan M.;
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作者单位

Madras Institute of Technology Campus, Anna University Chennai;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
Tunnel injection transistor laser; Separate confinement heterostructure (SCH); Tunneling probability; Modulation depth; Third order intermodulation distortion;

Investigations on the effect of separate confinement heterostructure width on the distortion performance of tunnel injection based transistor laser

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