Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip

Liu Kai; Huang Yongqing; Duan XiaofengRen XiaominWang QiCai ShiweiDong Xiaowen

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Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip

机译：Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip

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In this paper, we analyzed the carrier transport effect on the high-speed modulation performance of the integrated optoelectronic transceiving chip (IOTC). It will be determined by the hole transporting time through the p-side cladding layer of the IOTC VCSEL unit's intrinsic SCH cavity. For IOTC with long cavity length (1 lambda), shorter hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 9.55 to 11.2 GHz. For IOTC with short cavity length (1/2 lambda), longer hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 8.75 to 11.1 GHz. [GRAPHICS] .

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来源
《Optical and Quantum Electronics》 |2022年第2期|共10页
作者
Liu Kai; Huang Yongqing; Duan XiaofengRen XiaominWang QiCai ShiweiDong Xiaowen;
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作者单位

Beijing Univ Posts & Telecommun;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
Vertical cavity surface emitting laser (VCSEL); Optical interconnect; Frequency response; Optoelectronics; Data center; LASERS; IMPACT;

Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip

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