Vacancy clustering effect on the electronic and transport properties of bilayer graphene nanoribbons

Miranda L. P.; Da Costa D. R.; Peeters F. M.Costa Filho R. N.

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Vacancy clustering effect on the electronic and transport properties of bilayer graphene nanoribbons

机译：Vacancy clustering effect on the electronic and transport properties of bilayer graphene nanoribbons

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Experimental realizations of two-dimensional materials are hardly free of structural defects such as e.g. vacancies, which, in turn, modify drastically its pristine physical defect-free properties. In this work, we explore effects due to point defect clustering on the electronic and transport properties of bilayer graphene nanoribbons, for AA and AB stacking and zigzag and armchair boundaries, by means of the tight-binding approach and scattering matrix formalism. Evident vacancy concentration signatures exhibiting a maximum amplitude and an universality regardless of the system size, stacking and boundary types, in the density of states around the zero-energy level are observed. Our results are explained via the coalescence analysis of the strong sizeable vacancy clustering effect in the system and the breaking of the inversion symmetry at high vacancy densities, demonstrating a similar density of states for two equivalent degrees of concentration disorder, below and above the maximum value.

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《Nanotechnology》 |2023年第5期|共10页
作者
Miranda L. P.; Da Costa D. R.; Peeters F. M.Costa Filho R. N.;
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作者单位

Univ Fed Ceara;

Univ Antwerp;

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原文格式 PDF
正文语种英语
中图分类特种结构材料;
关键词
electronic properties; transport properties; bilayer graphene; nanoribbons; defects; FIELD-EFFECT TRANSISTORS; QUANTUM DOTS; DEFECTS;

Vacancy clustering effect on the electronic and transport properties of bilayer graphene nanoribbons

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