High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si

Steven Slivken; Manijeh Razeghi

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High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si

机译：High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si

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We report on the realization of an InP-based long wavelength quantum cascade laser grown on top of a silicon substrate. This demonstration first required the development of an epitaxial template with a smooth surface, which combines two methods of dislocation filtering. Once wafer growth was complete, a lateral injection buried heterostructure laser geometry was employed for efficient current injection and low loss. The laser emits at a wavelength of ~ $10.8~mu text{m}$ and is capable of operation above 373 K, with a high peak power (>4 W) at room temperature. Laser threshold behavior with temperature is characterized by a T0 of 178 K. The far field beam shape is single lobed, showing fundamental transverse mode operation.

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《IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society》 |2022年第6期|2300206-1-2300206-6|共6页
作者
Steven Slivken; Manijeh Razeghi;
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作者单位

Northwestern University;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类基础理论;
关键词
Quantum cascade laser; monolithic integration; heteroepitaxy; Quantum cascade lasers; Silicon; Indium phosphide; III-V semiconductor materials; Gallium arsenide; X-ray diffraction; Substrates;

High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si

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