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Design of high-quality reflectors for vertical III-V nanowire lasers on Si

机译：Design of high-quality reflectors for vertical III-V nanowire lasers on Si

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摘要

Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analysed with III-V materials, e.g. GaAs(P) and InAs(P). The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO2 or Si2N3 dielectric mask at the interface can only improve it to similar to 10, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.

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