首页> 外文期刊>Nano letters >Strong Second Harmonic Generation from Bilayer Graphene with Symmetry Breaking by Redox-Governed Charge Doping
【24h】

Strong Second Harmonic Generation from Bilayer Graphene with Symmetry Breaking by Redox-Governed Charge Doping

机译:Strong Second Harmonic Generation from Bilayer Graphene with Symmetry Breaking by Redox-Governed Charge Doping

获取原文
获取原文并翻译 | 示例
           

摘要

Missing second-order nonlinearity in centrosymmetric graphene overshadows its intriguing optical attribute. Here, we report redox-governed charge doping could effectively break the centrosymmetry of bilayer graphene (BLG), enabling a strong second harmonic generation (SHG) with a strength close to that of the well-known monolayer MoS2. Verified from control experiments with in situ electrical current annealing and electrically gate controlled SHG, the required centrosymmetry breaking of the emerging SHG arises from the charge-doping on the bottom layer of BLG by the oxygen/water redox couple. Our results not only reveal that charge doping is an effective way to break the inversion symmetry of BLG despite its strong interlayer coupling but also indicate that SHG spectroscopy is a valid technique to probe molecular doping on two-dimensional materials.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号