Ultrawide-bandgap semiconductors: An overview

Wong Man Hoi; Bierwagen Oliver; Kaplar Robert J.Umezawa Hitoshi

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Ultrawide-bandgap semiconductors: An overview

机译：Ultrawide-bandgap semiconductors: An overview

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Abstract Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. This focus issue presents a timely selection of papers spanning the current state of the art in UWBG materials and applications, including both experimental results and theoretical developments. It covers broad research subtopics on UWBG bulk crystals and substrate technologies, UWBG defect science and doping, UWBG epitaxy, UWBG electronic and optoelectronic properties, and UWBG power devices and emitters. In this overview article, we consolidate the fundamentals and background of key UWBG semiconductors including aluminum gallium nitride alloys (AlxGa1–xN), boron nitride (BN), diamond, β-phase gallium oxide (β-Ga2O3), and a number of other UWBG binary and ternary oxides.Graphical Abstract

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《Journal of Materials Research》 |2021年第23期|4601-4615|共15页
作者
Wong Man Hoi; Bierwagen Oliver; Kaplar Robert J.Umezawa Hitoshi;
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作者单位

University of Massachusetts Lowell;

Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V.;

Sandia National LaboratoriesNational Institute of Advanced Industrial Science and Technology;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
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Ultrawide-bandgap semiconductors: An overview

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