Van der Waals Magnetic Heterojunctions with Giant Zero-Bias Tunneling Magnetoresistance and Photo-Assisted Magnetic Memory

Xiwen Zhang; Yilv Guo; Zhaobo ZhouXiuyun ZhangYunfei ChenXiao Cheng ZengJinlan Wang

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Van der Waals Magnetic Heterojunctions with Giant Zero-Bias Tunneling Magnetoresistance and Photo-Assisted Magnetic Memory

机译：Van der Waals Magnetic Heterojunctions with Giant Zero-Bias Tunneling Magnetoresistance and Photo-Assisted Magnetic Memory

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Van der Waals (vdW) magnetic heterostructures can offer much improvedperformance in logical operation and information storage technology comparedwith conventional ones. However, it is still challenging to achievethe perfect spin-filtering capability in the vdW magnetic devices, a majorobstacle to the advancement of low-dimensional magnetic informationstorage. Herein, this study reports two newly designed vdW magnetic multilayers,ZrTe_2/CrOCl/CrOX/ZrTe_2 (X = Cl, Br), where the CrOCl/CrOX bilayeracts as the spin-filter tunnel barriers. With the vdW interfacial engineeringand the doubly spin-filtering effect of the CrOCl/CrOX bilayer, the vdWfour-layer heterostructures can potentially function as a perfect zero-biasspin filter with giant spin-filter energy-dependent tunnel magnetoresistanceup to 48 000. Importantly, these calculations also show that the CrOCl/CrOBr bilayer without the 1T-ZrTe_2 stacking can produce intensive and weakphoto-carrier transmission at parallel and antiparallel magnetization states,respectively. As such, the two contrasting photoelectric responses can beimplemented for encoding the digital information as “‘1”’ and “‘0”’ viaflipping the interlayer magnetic states. These novel functionalities not onlyendow the CrOCl/CrOX bilayer as a promising candidate for spin-based vdWdevices but also facilitate the future development of atomically thin magneticinformation storage.

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来源
《Advanced functional materials》 |2022年第28期|2200154.1-2200154.8|共8页
作者
Xiwen Zhang; Yilv Guo; Zhaobo ZhouXiuyun ZhangYunfei ChenXiao Cheng ZengJinlan Wang;
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作者单位

School of Mechanical EngineeringSoutheast UniversityNanjing 211189, China;

School of PhysicsSoutheast UniversityNanjing 211189, China;

College of Physics Science and TechnologyYangzhou UniversityYangzhou 225002, ChinaDepartment of ChemistryUniversity of Nebraska-LincolnLincoln NE 68588, USASchool of PhysicsSoutheast UniversityNanjing 211189, China, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA)Hunan Normal UniversityChangsha, Hunan 410081, China;

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first-principles calculations; non-equilibrium Green’s function method; photo-assisted magnetic memory; van der Waals magnetic heterostructures; zero-bias spin-filter tunnel magnetoresistance;

Van der Waals Magnetic Heterojunctions with Giant Zero-Bias Tunneling Magnetoresistance and Photo-Assisted Magnetic Memory

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