High Thermoelectric Performance in Earth-Abundant Cu_3SbS_4 by Promoting Doping Efficiency via Rational Vacancy Design

De Zhang; Xincan Wang; Hong WuYuling HuangSikang ZhengBin ZhangHuixia FuZien ChengPengfei JiangGuang HanGuoyu WangXiaoyuan ZhouXu Lu

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High Thermoelectric Performance in Earth-Abundant Cu_3SbS_4 by Promoting Doping Efficiency via Rational Vacancy Design

机译：High Thermoelectric Performance in Earth-Abundant Cu_3SbS_4 by Promoting Doping Efficiency via Rational Vacancy Design

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Sulfides are well investigated as thermoelectric materials but their performanceis typically limited by low electrical conductivity. High electricalperformance in Cu_3SbS_4 is reported by creating high valence vacancies, whichefficiently provides multiple carriers. It is revealed from the perspective of achemical bond by calculations that Al can serve as vacancy stabilizer as itsentry into the lattice forms intensified bonds with neighboring atoms andlowers the vacancy formation energy. As a result, the average power factor ofCu_3SbS_4 with 9 wt CuAlS_2 reaches 16.1 μW cm~(?1) K~(?2). Finally, by further additionof AgAlS_2, a peak zT of 1.3 and an average zT of 0.77 are obtained dueto the reduced thermal conductivity. The attained average power factor andaverage zT are superior to other low-toxic thermoelectric sulfides. The findingsshed light on the new strategy for creating favorable vacancies to realizehigh-efficiency doping in thermoelectric materials.

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来源
《Advanced functional materials》 |2023年第15期|2214163.1-2214163.12|共12页
作者
De Zhang; Xincan Wang; Hong WuYuling HuangSikang ZhengBin ZhangHuixia FuZien ChengPengfei JiangGuang HanGuoyu WangXiaoyuan ZhouXu Lu;
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作者单位

College of Physics and Center of Quantum Materials & DevicesChongqing UniversityChongqing 401331, P. R. China;

School of ScienceChongqing University of Posts and TelecommunicationsChongqing 401331, P. R. China;

Analytical and Testing CenterChongqing UniversityChongqing 401331, P. R. ChinaSchool of Chemistry and Chemical EngineeringChongqing UniversityChongqing 401331, P. R. ChinaCollege of Materials Science and EngineeringChongqing UniversityChongqing 400044, P. R. ChinaCollege of Physics and Center of Quantum Materials & DevicesChongqing UniversityChongqing 401331, P. R. China, Analytical and Testing CenterChongqing UniversityChongqing 401331, P. R. China;

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正文语种英语
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bond strength; high-efficiency dopants; sulfides; thermoelectric performance; vacancy designs;

High Thermoelectric Performance in Earth-Abundant Cu_3SbS_4 by Promoting Doping Efficiency via Rational Vacancy Design

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