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首页> 外文期刊>Advanced functional materials >Ion-Bolometric Effect in Grain Boundaries Enabled High Photovoltage Response for NIR to Terahertz Photodetection
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Ion-Bolometric Effect in Grain Boundaries Enabled High Photovoltage Response for NIR to Terahertz Photodetection

机译：Ion-Bolometric Effect in Grain Boundaries Enabled High Photovoltage Response for NIR to Terahertz Photodetection

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The excellent performance of bolometers in the infrared and terahertzregions has attracted great attention. Understanding the transport process ofcharged particles is an efficient approach to determine detector performance.However, the lack of studies on the fine-scale spatial motion of microscopicparticles in bolometers has prevented a full understanding of the physicalprocess. Herein, using micro-nano-scale optoelectronic performance correlationmeasurements, it is described how prevalent defect states at the grainboundaries (GBs) decrease current responses. Ions at the GBs of the polycrystallineperovskite bolometer contribute to the photocurrent via thermalexcitons. In addition, the built-in electric field established by ion migrationfluctuates periodically with the strength of the light-heating process due tothe interaction between the bolometric effect and the Coulomb force. Additionally,the first ion-bolometric detector is demonstrated with a significantphotovoltage response to infrared and THz waves (75.3 kV W~(?1) at 1064 nmand 2.3 kV W~(?1) at 0.22 THz). An examination of the THz images shows thepotential for large-area THz imaging applications. The ion-bolometric effectcombines the broad spectral characteristics of the bolometer effect with thetemperature sensitivity due to ion migration and provides a unique perspectiveon detector technology.

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