Abstract The ByInxGa1-x–yN system is a good candidate for the fabrication of optoelectronic devices such as light emitting diodes and laser diodes. In this work, we present a comparative study between p-GaN/p-AlGaN/InGaN/n-GaN/GaN LED having InGaN as a single quantum well (SQW) and a second one that has BInGaN as a single quantum well, with 1 of boron, 22 of indium, and 3?nm of thickness; i.e. p-GaN/p-AlGaN/BInGaN/n-GaN/GaN. Using Silvaco TCAD simulator; we simulate and compare the electrical and optical characteristics of the LEDs. We simulate the anode current as a function of the anode voltage, the luminous power and the wall-plug efficiency as a function of the anode current, and the power spectral density as a function of the wavelength. With only 1 of boron content in the quantum well, the performances of the LED are improved by 18 in the power spectral density and 7 improvement in wall-plug efficiency.
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