Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW

Luigi Fassio; Longyang Lin; Raffaele De RoseMarco LanuzzaFelice CrupiMassimo Alioto

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Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW

机译：Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW

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This article introduces a compact NMOS-only voltage reference that is able to operate down to a 0.25-V supply voltage and 5.4-pW power consumption. This allows reliable generation of a stable output voltage even in harvested systems under highly uncertain environmental conditions. At the system level, pW-power, 0.25–1.8-V operation, and a competitive power supply rejection ratio (PSRR) relax or eliminate the need for intermediate power conversion and supply regulation for additional power and cost reductions. The proposed voltage reference is based on a body biasing scheme assisted by replica well biasing to compensate voltage and temperature fluctuations. A 180-nm test chip shows that the proposed reference occupies an area of inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" tex-math notation="LaTeX"$2200~mu text{m}^{2}$ /tex-math/inline-formula, while providing 91.4-mV output voltage with 0.51-mV (0.56) standard deviation, inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" tex-math notation="LaTeX"$24.2~mu text{V}/^{circ }text{C}$ /tex-math/inline-formula (265 ppm/°C) temperature coefficient, and inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" tex-math notation="LaTeX"$144.5~mu text{V}$ /tex-math/inline-formula/V (0.16/V) line sensitivity across 30 dice from the same manufacturing lot. The resulting absolute output voltage accuracy without any trimming is 2.8 mV at 3-inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" tex-math notation="LaTeX"$sigma $ /tex-math/inline-formula variations, 0.3-V fluctuation, and temperature change by 50 °C, improving on prior art by 1.4–inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" tex-math notation="LaTeX"$19.7times $ /tex-math/inline-formula. Overall, the capability of reliable operating down to ultralow voltages, pW-power, and the inherently small footprint make the proposed reference well suited for low-cost tightly constrained systems.

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来源
《IEEE Journal of Solid-State Circuits》 |2021年第10期|3134-3144|共11页
作者
Luigi Fassio; Longyang Lin; Raffaele De RoseMarco LanuzzaFelice CrupiMassimo Alioto;
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作者单位

University of Calabria, Rende, Italy;

National University of Singapore, Singapore;

School of Microelectronics, Southern University of Science and Technology, Shenzhen, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Transistors; Logic gates; Temperature sensors; Art; Temperature dependence; Subthreshold current; Power demand;

Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW

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