Large-Area, Fast-Gated Digital SiPM With Integrated TDC for Portable and Wearable Time-Domain NIRS

Enrico Conca; Vincenzo Sesta; Mauro ButtafavaFederica VillaLaura Di SienoAlberto Dalla MoraDavide ContiniPaola TaroniAlessandro TorricelliAntonio PifferiFranco ZappaAlberto Tosi

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Large-Area, Fast-Gated Digital SiPM With Integrated TDC for Portable and Wearable Time-Domain NIRS

机译：Large-Area, Fast-Gated Digital SiPM With Integrated TDC for Portable and Wearable Time-Domain NIRS

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摘要

We present the design and characterization of a large-area, fast-gated, all-digital single-photon detector with programmable active area, internal gate generator, and time-to-digital converter (TDC) with a built-in histogram builder circuit, suitable for performing high-sensitivity time-domain near-infrared spectroscopy (TD-NIRS) measurements when coupled with pulsed laser sources. We used a novel low-power differential sensing technique that optimizes area occupation. The photodetector is a time-gated digital silicon photomultiplier (dSiPM) with an 8.6-mmsup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"2/sup photosensitive area, 37 fill-factor, and ~300 ps (20–80) gate rising edge, based on low-noise single-photon avalanche diodes (SPADs) and fabricated in 0.35-inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" tex-math notation="LaTeX"$mu text{m}$ /tex-math/inline-formula CMOS technology. The built-in TDC with a histogram builder has a least-significant-bit (LSB) of 78 ps and 128 time-bins, and the integrated circuit can be interfaced directly with a low-cost microcontroller with a serial interface for programming and readout. Experimental characterization demonstrated a temporal response as good as 300-ps full-width at half-maximum (FWHM) and a dynamic range 100 dB (thanks to the programmable active area size). This microelectronic detector paves the way for a miniaturized, stand-alone, multi-wavelength TD-NIRS system with an unprecedented level of integration and responsivity, suitable for portable and wearable systems.

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来源
《IEEE Journal of Solid-State Circuits》 |2020年第11期|3097-3111|共15页
作者
Enrico Conca; Vincenzo Sesta; Mauro ButtafavaFederica VillaLaura Di SienoAlberto Dalla MoraDavide ContiniPaola TaroniAlessandro TorricelliAntonio PifferiFranco ZappaAlberto Tosi;
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作者单位

Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy;

Politecnico di Milano, Milan, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Detectors; Single-photon avalanche diodes; Photonics; Logic gates; Power demand; Optical attenuators; Histograms;

Large-Area, Fast-Gated Digital SiPM With Integrated TDC for Portable and Wearable Time-Domain NIRS

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