Flexible ZnO Nanosheet-Based Artificial Synapses Prepared by Low-Temperature Process for High Recognition Accuracy Neuromorphic Computing

YiLong Wang; Minghui Cao; Jing BianQiang LiJie Su

首页> 外文期刊>Advanced functional materials >Flexible ZnO Nanosheet-Based Artificial Synapses Prepared by Low-Temperature Process for High Recognition Accuracy Neuromorphic Computing

【24h】

Flexible ZnO Nanosheet-Based Artificial Synapses Prepared by Low-Temperature Process for High Recognition Accuracy Neuromorphic Computing

机译：Flexible ZnO Nanosheet-Based Artificial Synapses Prepared by Low-Temperature Process for High Recognition Accuracy Neuromorphic Computing

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

In neuromorphic computing networks, a flexible synaptic memristor withhigh recognition accuracy is highly desired. In this study, ZnO nanosheets(ZnO NS) embedded within a polymethyl methacrylate host material areused as the intermediate layer to prepare flexible synaptic memristor at alow-temperature of 80 ℃. The device shows excellent switching characteristicswith low SET/RESET voltages (?0.4 V/0.4 V) and stable retentioncharacteristic (10~4 s). By modulating the conductance continuously, theflexible synaptic memristor simulates typical synaptic plasticities, includingexcitation post-synaptic current, paired-pulse facilitation, and spike-timingdependent plasticity. Especially, the neuromorphic system built from flexibleZnO NS-based memristors achieves a high recognition accuracy up to97.7 for handwriting digit. Under the influence of 5 Uniform noise and 5Gaussian noise, recognition accuracies are maintained at 94.6 and 93.7,respectively. These properties are well maintained even when bending 1000times at a radius of 5 mm. The flexible ZnO NS-based memristor shows greatprospects in wearable devices and neural morphology calculation.

著录项

来源
《Advanced functional materials》 |2022年第51期|2209907.1-2209907.11|共11页
作者
YiLong Wang; Minghui Cao; Jing BianQiang LiJie Su;
展开▼
作者单位

College of Physics ScienceQingdao UniversityQingdao 266071, P. R. China;

College of Electronic and Information EngineeringQingdao UniversityQingdao 266071, P. R. China;

展开▼
收录信息
原文格式 PDF
正文语种英语
中图分类
关键词
artificial synapses; flexibilities; neuromorphic computing; ZnO nanosheets;

Flexible ZnO Nanosheet-Based Artificial Synapses Prepared by Low-Temperature Process for High Recognition Accuracy Neuromorphic Computing

摘要

著录项

相关主题

期刊订阅